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M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity Revision:SEMI M51-1012 - Current 1-0707 (technical revision)

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Description

1-0707 (technical revision)

• Annealed wafers (refer to SEMI M57)

11-0301 (first published)

2  Test Method B — Linear photovoltage

This Document references SEMI E78

M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity Revision:SEMI M51-1012 - Current 1-0707 (technical revision)This Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 30, 2012. Available at www. semiviews. org and www. semi. org in October 2012; originally published July 2002; previously published March 2003. NOTICE: This Document was completely rewritten in 2012. This Test Method describes procedures for characterizing silicon

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