M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method StdPbc-0819 SEMI E21-94 (Reapproved 0699)

SEMI E21-94 (Reapproved 0699)

3-0600 (technical revision)

This Standard applies to compact size three-port/two-fastener components

for use on silicon specimens only

The procedures may be used by the material manufacturer for quality control or by a customer at incoming inspection

M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method StdPbc-0819 SEMI E21-94 (Reapproved 0699)In recent years, ULSI and other devices have been increasingly miniaturized and integrated. As a result, high tech devices use more and more epitaxial wafers (p p+, n n+) which have substrates with lower resistivity, because epitaxial wafers are advantageous over other types of silicon wafers in several respects. For example, their features include integrity of active region of device, gettering capacity, resistance for latch up, etc. On the other